Rare-earth oxyorthosilicate scintillator crystals and method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

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C117S019000, C117S071000, C117S081000, C117S082000, C117S940000

Reexamination Certificate

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08062419

ABSTRACT:
A method of making LSO scintillators with high light yield and short decay times is disclosed. In one arrangement, the method includes codoping LSO with cerium and another dopant from the IIA or IIB group of the periodic table of elements. The doping levels are chosen to tune the decay time of scintillation pulse within a broader range (between about ˜30 ns up to about ˜50 ns) than reported in the literature, with improved light yield and uniformity. In another arrangement, relative concentrations of dopants are chosen to achieve the desired light yield and decay time while ensuring crystal growth stability.

REFERENCES:
patent: 5025151 (1991-06-01), Melcher
patent: 6921901 (2005-07-01), Chai et al.
patent: 2008/0213151 (2008-09-01), Yoshikawa et al.
patent: 2008/0299027 (2008-12-01), Kurata et al.
Spurrier, Merry A., “Effects of Ca2+ Co-Doping on the Scintillation Properties of LSO:Ce”, IEEE Transactions on Nuclear Science, vol. 55, No. 3, Jun. 2008, pp. 1178-1182.

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