Rare earth-oxides, rare earth-nitrides, rare...

Details Rare earth-oxides, rare earth-nitrides, rare... Rare earth-oxides, rare earth-nitrides, rare...

2008-04-01

2008-04-01

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S251000, C257S022000

Reexamination Certificate

active

11025363

ABSTRACT:
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)-(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.

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Kwo et al “Properties . . . Si” J. App. Physics vol. 89, No. 7, Apr. 1, 2001 pp. 3920-3927.

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