Rare earth-oxides, rare earth-nitrides, rare...

Details Rare earth-oxides, rare earth-nitrides, rare... Rare earth-oxides, rare earth-nitrides, rare...

2007-04-03

2007-04-03

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S723000, C438S724000, C438S752000, C438S753000, C438S933000, C257SE21008, C257S561000

Reexamination Certificate

active

11025680

ABSTRACT:
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.

REFERENCES:
patent: 5411649 (1995-05-01), Roussy et al.
patent: 5474976 (1995-12-01), Kondoh et al.
patent: 5728213 (1998-03-01), Kurata et al.
patent: 6362011 (2002-03-01), Massey et al.
patent: 6734453 (2004-05-01), Atanackovic et al.
patent: 2003/0183885 (2003-10-01), Nishikawa et al.

Affiliated with

Also associated with

Rating

Rare earth-oxides, rare earth-nitrides, rare... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rare earth-oxides, rare earth-nitrides, rare..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rare earth-oxides, rare earth-nitrides, rare... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3784985