Rare earth-oxides, rare earth-nitrides, rare...

Details Rare earth-oxides, rare earth-nitrides, rare... Rare earth-oxides, rare earth-nitrides, rare...

2007-09-25

2007-09-25

McNeil, Jennifer (Department: 1775)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S698000

Reexamination Certificate

active

11025681

ABSTRACT:
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE—(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.

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patent: 2003/0183885 (2003-10-01), Nishikawa et al.

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