Rare earth oxide-based garnet single crystal for magnetostatic d

Details Rare earth oxide-based garnet single crystal for magnetostatic d Rare earth oxide-based garnet single crystal for magnetostatic d

1994-02-01

1995-09-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

428693, 428900, 252 6257, B32B 900, B32B 1900

Patent

active

054499429

ABSTRACT:
Proposed is a novel rare earth oxide-based magnetic garnet single crystal in the form of a film epitaxially grown in the crystallographic direction of <111> on the substrate of a rare earth oxide-based garnet single crystal, which is useful as a magnetostatic device such as high-frequency oscillators capable of exhibiting improved temperature characteristics. The magnetic garnet single crystal is characterized by the specific chemical composition of the formula (Bi.sub.x R.sub.3-x)(Fe.sub.5-y M.sub.y)O.sub.12, in which R, is a rare earth element selected from the group consisting of Y, Lu, La or a combination thereof, M is Ga, Al or a combination thereof, x is 0.02 to 0.4 and y is 0.6 to 0.8, and also by the specific value of the growth-induced magnetic anisotropy constant Ku.sup.g in the range from 0.3.times.10.sup.4 to 1.5.times.10.sup.4 erg/cm.sup.3 in the crystallographic <111> direction which can be imparted by an annealing heat treatment at a specified temperature.

REFERENCES:
patent: 4435484 (1984-03-01), Breed et al.
patent: 4544239 (1985-10-01), Shone et al.
patent: 4625390 (1986-12-01), Shone et al.

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