Rare earth element-doped silicon/silicon dioxide lattice...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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C257S103000, C257S222000, C438S022000, C438S029000, C438S030000, C438S045000

Reexamination Certificate

active

11039463

ABSTRACT:
Provided are an electroluminescence (EL) device and corresponding method for forming a rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure. The method comprises: providing a substrate; DC sputtering a layer of amorphous Si overlying the substrate; DC sputtering a rare earth element; in response, doping the Si layer with the rare earth element; DC sputtering a layer of SiO2 overlying the rare earth-doped Si; forming a lattice structure; annealing; and, in response to the annealing, forming nanocrystals in the rare-earth doped Si having a grain size in the range of 1 to 5 nanometers (nm). In one aspect, the rare earth element and Si are co-DC sputtered. Typically, the steps of DC sputtering Si, DC sputtering the rare earth element, and DC sputtering the SiO2 are repeated 5 to 60 cycles, so that the lattice structure includes the plurality (5-60) of alternating SiO2 and rare earth element-doped Si layers.

REFERENCES:
patent: 2004/0183087 (2004-09-01), Gardner
Pavesi L etc. “Optical gain in silicon nanocrystals” Nature, 440-444, 2003. Keisuke Sato etc. “Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR.” Applied surface science, 216 (1-4), 376-381, 2003.
Keisuke Sato etc. “Multi-color luminescence from surface oxidized silicon nanoparticles.” MRS Fall meeting, 2003.
Maria E. Castagna etc. “High efficiency light emission devices in silicon.” MRS spring meeting, 2003.
Pasquarello A etc. “Si 2p Core-level Shifts at the Si(001)-SiO2 Interface: A first-Principles Study” Phys. Rev. Lett. 74, No. 6 1024 (1995).
Minoru Fujii etc. “Improvement in photoluminescence efficiency of SiO2films containing Si nanocrystals by P doping: An electron spin resonance study” J, Appl. Phys. 87. No. 4 1855 (2000).

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