Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-08-14
2007-08-14
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S103000, C257S222000, C438S022000, C438S029000, C438S030000, C438S045000
Reexamination Certificate
active
11039463
ABSTRACT:
Provided are an electroluminescence (EL) device and corresponding method for forming a rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure. The method comprises: providing a substrate; DC sputtering a layer of amorphous Si overlying the substrate; DC sputtering a rare earth element; in response, doping the Si layer with the rare earth element; DC sputtering a layer of SiO2 overlying the rare earth-doped Si; forming a lattice structure; annealing; and, in response to the annealing, forming nanocrystals in the rare-earth doped Si having a grain size in the range of 1 to 5 nanometers (nm). In one aspect, the rare earth element and Si are co-DC sputtered. Typically, the steps of DC sputtering Si, DC sputtering the rare earth element, and DC sputtering the SiO2 are repeated 5 to 60 cycles, so that the lattice structure includes the plurality (5-60) of alternating SiO2 and rare earth element-doped Si layers.
REFERENCES:
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Gao Wei
Hsu Sheng Teng
Li Tingkai
Ono Yoshi
Law Office of Gerald Maliszewski
Lee Hsien-Ming
Maliszewski Gerald
Sharp Laboratories of America Inc.
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