Rare-earth element-doped III-V compound semiconductor schottky d

Details Rare-earth element-doped III-V compound semiconductor schottky d Rare-earth element-doped III-V compound semiconductor schottky d

1996-12-23

1998-12-08

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

257472, 257475, H01L 27095, H01L 2947, H01L 29812

Patent

active

058474374

ABSTRACT:
A semiconductor device has an improved schottky barrier junction. The device includes: a substrate; an epitaxial layer covering the substrate and lightly doped with a dopant selected from a group consisting of a rare earth element and an oxide of a rare earth element; and a metal layer covering the epitaxial layer and forming said schottky barrier junction with said epitaxial layer.

REFERENCES:
patent: 5087956 (1992-02-01), Katano
patent: 5132282 (1992-07-01), Nanman et al.
patent: 5148240 (1992-09-01), Ohtsuka et al.
patent: 5517054 (1996-05-01), Huang et al.
Sharma et al; "Effect of rare earth doping on electrical & photoelectrical properties . . . "; Synthetic Metals vol. 80 pp. 249-256; Jul. 15, 1996.

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