Rare earth doping of porous silicon

Details Rare earth doping of porous silicon Rare earth doping of porous silicon

1998-05-22

2000-05-02

Phasge, Arun S.

Electrolysis: processes, compositions used therein, and methods

Electrolytic material treatment

Solid

205766, 204515, H01L 2102

Patent

active

060568682

ABSTRACT:
The present invention discloses the doping of rare earth elements into porous silicon, resulting in enhancement of luminescence. The doping is an electro-chemical process using constant voltage bias across the two electrodes in which the anode is porous silicon and the cathode is platinum. The doping process involves a well-defined solution of electrolytes that controls the conductivity of the solution, and set values of constant voltages that selectively allow the desired rare earth elements being doped into porous silicon.

REFERENCES:
patent: 3919060 (1975-11-01), Pogge et al.
patent: 5246475 (1993-09-01), Edagawa et al.

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