Rare earth doped semiconductor laser

Details Rare earth doped semiconductor laser Rare earth doped semiconductor laser

1986-09-26

1988-04-12

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 61, 357 63, 372 46, 372704, H01S 319

Patent

active

047379600

ABSTRACT:
A solid state laser is disclosed wherein a semiconductor active layer is arranged in a Fabry-Perot cavity and the active layer is doped with a rare earth ion having a dominant emission wavelength. The proportion of elements for the compound active layer is chosen such that the bandgap corresponds to a wavelength which is longer than the emission wavelength of the rare earth ion. In the specific embodiment disclosed, the quarternary semiconductor compound is gallium indium arsenide phosphide and the rare earth ion is erbium.

REFERENCES:
patent: 4081763 (1978-03-01), Vlasenko et al.
patent: 4193044 (1980-03-01), Morrison et al.
patent: 4637025 (1987-01-01), Snitzer et al.
Appl. Phys. Let. 45, 15 Nov., 1984, "A New High-Power, Narrow-Beam . . . ", W. T. Tsang et al., pp. 1025-1027.
Appl. Phys. Let. 46, 15 Feb., 1985, "1.54-.mu.m Electroluminescence of Erbium-Doped Silicon . . . ", H. Ennen, et al., pp. 381-383.
Appl. Phys. Let. 46, 1 May, 1985, "Ytterbium-Doped InP Light-Emitting Diode at 1.0 .mu.m", W. H. Haydl et al., pp. 870-872.
J. App. Phys., 59, 15 Jan., 1986, "Photoluminescence Optimization and Characteristics of the Rare-Earth . . . ", G. S. Pomrenke et al., pp. 601-610.
J. App. Phys., 59, 15 Feb., 1986, "Neodymium Complexes in GaP Separated by Photoluminescence Excitation Spectroscopy", J. Wagner et al., pp. 1202-1204.

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