Rapid thermal processing using a narrowband infrared source and

Details Rapid thermal processing using a narrowband infrared source and Rapid thermal processing using a narrowband infrared source and

1996-07-11

1998-05-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

G01R 3126, H01L 2166

Patent

active

057563691

ABSTRACT:
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.

REFERENCES:
patent: 4752454 (1988-06-01), Pastor et al.
patent: 4979134 (1990-12-01), Arima et al.
patent: 5304357 (1994-04-01), Sato et al.
patent: 5436172 (1995-07-01), Moslehi
patent: 5564830 (1996-10-01), Bobel et al.
patent: 5580801 (1996-12-01), Maegawa et al.

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