Rapid thermal processing method of making a semiconductor device

Details Rapid thermal processing method of making a semiconductor device Rapid thermal processing method of making a semiconductor device

1989-08-16

1991-07-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 148DIG20, H01L 2144

Patent

active

050360230

ABSTRACT:
The inventive method of producing a device having non-alloyed ohmic contacts of common composition to both an n-doped and a p-doped region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed by rapid thermal processing (RTP). Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-475.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).

REFERENCES:
patent: 4186410 (1980-01-01), Cho et al.
patent: 4301188 (1981-11-01), Niehaus
patent: 4398963 (1983-08-01), Stall et al.
patent: 4595454 (1986-06-01), Dautremont-Smith
"Electron Tunneling and Contact Resistance of Metal-Silicon Contact Barriers", by A. Y. C. Yu, Solid-State Electronics, Pergamon Press 1970, vol. 13, pp. 239-247.
"Ohmic Contacts to n-GaAs Using Graded Band Gap Layers of Ga.sub.1-x In.sub.x As Grown by Molecular Beam Epitaxy", by J. M. Woodall et al., Journal Vacuum Science Technology, 19(3), Sep./Oct. 1981, pp. 626-627.
"Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In.sub.x Ga.sub.1-x As Layers", by T. Nittono et al., Japanese Journal of Applied Physics, vol. 25, No. 10, Oct. 1986, pp. L865-L867.
"A Nonalloyed, Low Specific Resistance Ohmic Contact to n-InP", by W. C. Dautremont-Smith et al., Journal Vacuum Science Technology, B2 (4), Oct.-Dec. 1984, pp. 620-625.
"Mechanism of Catastrophic Degradation in InGaAsP/InP Double-Heterostructure Light Emitting Diodes with Ti/Pt/Au Electrodes", by O. Ueda et al., Journal Applied Physics, 54(11), Nov. 1983, pp. 6732-6739.
"The Design and Realization of a High Reliability Semiconductor Laser for Single-Mode Fiber-Optical Communication Links", by A. R. Goodwin et al., Journal of Lightwave Technology, vol. 6, No. 9, Sep. 1988, pp. 1424-1434.
"Sputtered Ni-P as an Ohmic Contact to n-InP, p-InGaAs and as a Diffusion Barrier", by A. Appelbaum et al., IEEE Transactions on Electron Devices, vol. ED-34, No. 5, May 1987, pp. 1026-1031.
"Heavily Si-Doped InGaAs Lattice-Matched to InP Grown by MBE", by T. Fujii et al., Electronics Letters, vol. 22, No. 4, Feb. 13, 1986, pp. 191-192.
"Pt/Ti/p-InGaAsP Nonalloyed Ohmic Contact Formed by Rapid Thermal Processing", by A. Katz et al., Journal Applied Physics, 65(11), Jun. 1, 1989, pp. 4319-4323.
"Pt/Ti/p-In.sub.0.53 Ga.sub.0.47 As Low-Resistance Nonalloyed Ohmic Contact Formed by Rapid Thermal Processing", A. Katz et al., Applied Physics Letters, 54(23), Jun. 5, 1989, pp. 2306-2308.

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