Rapid thermal processing apparatus for processing semiconductor

Details Rapid thermal processing apparatus for processing semiconductor Rapid thermal processing apparatus for processing semiconductor

1997-11-25

2000-11-21

Pelham, Joseph

Electric resistance heating devices

Heating devices

Radiant heater

219390, 219411, 118728, 118730, C23C 1600, F27D 1102

Patent

active

061514470

ABSTRACT:
A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

REFERENCES:
patent: 3279946 (1966-10-01), Schaarschmidt
patent: 3783822 (1974-01-01), Wollam
patent: 3835751 (1974-09-01), Anderson
patent: 3862397 (1975-01-01), Anderson et al.
patent: 3916822 (1975-11-01), Robinson
patent: 4047496 (1977-09-01), McNeilly
patent: 4081313 (1978-03-01), McNeilly
patent: 4101759 (1978-07-01), Anthony
patent: 4113547 (1978-09-01), Katz
patent: 4468260 (1984-08-01), Hiramoto
patent: 4493977 (1985-01-01), Arai
patent: 4497683 (1985-02-01), Celler
patent: 4511688 (1985-04-01), Arai et al.
patent: 4533820 (1985-08-01), Shimizu
patent: 4540876 (1985-09-01), McGinty
patent: 4545327 (1985-10-01), Cambell
patent: 4550245 (1985-10-01), Arai
patent: 4560420 (1985-12-01), Lord
patent: 4649261 (1987-03-01), Sheets
patent: 4680451 (1987-07-01), Gat
patent: 4755654 (1988-07-01), Crowley
patent: 4789771 (1988-12-01), Robinson
patent: 4796562 (1989-01-01), Brors
patent: 4798165 (1989-01-01), DeBoer
patent: 4821674 (1989-04-01), DeBoer
patent: 4823735 (1989-04-01), Pichel
patent: 4828224 (1989-05-01), Crabb
patent: 4836138 (1989-06-01), Robinson
patent: 4851358 (1989-07-01), Huber
patent: 4857689 (1989-08-01), Lee
patent: 4920918 (1990-05-01), Adams
patent: 4924807 (1990-05-01), Nakayma
patent: 4951601 (1990-08-01), Maydan
patent: 4975561 (1990-12-01), Robinson et al.
patent: 4978567 (1990-12-01), Miller
patent: 4986838 (1991-01-01), Johnsgard
patent: 4989540 (1991-02-01), Fuse
patent: 5011794 (1991-04-01), Grim et al.
patent: 5034100 (1991-07-01), Zavracky
patent: 5034199 (1991-07-01), Zavacky
patent: 5044943 (1991-09-01), Bowman
patent: 5053247 (1991-10-01), Moore
patent: 5060354 (1991-10-01), Chizinsky
patent: 5074017 (1991-12-01), Toya et al.
patent: 5077875 (1992-01-01), Hoke
patent: 5085887 (1992-02-01), Adams et al.
patent: 5098198 (1992-03-01), Nulman
patent: 5104276 (1992-04-01), Severns
patent: 5106200 (1992-04-01), Hosokawa
patent: 5108792 (1992-04-01), Anderson et al.
patent: 5152842 (1992-10-01), Urata et al.
patent: 5155336 (1992-10-01), Gronet et al.
patent: 5156820 (1992-10-01), Wong et al.
patent: 5169684 (1992-12-01), Takagi
patent: 5179677 (1993-01-01), Anderson et al.
patent: 5226056 (1993-07-01), Kikuchi
patent: 5252807 (1993-10-01), Chizinsky
patent: 5254171 (1993-10-01), Hayakawa et al.
patent: 5370739 (1994-12-01), Foster
patent: 5387557 (1995-02-01), Takagi
patent: 5429498 (1995-07-01), Okase et al.
patent: 5431737 (1995-07-01), Keller et al.
patent: 5444217 (1995-08-01), Moore et al.
patent: 5527393 (1996-06-01), Sato et al.
patent: 5683518 (1997-11-01), Moore et al.
H.M. Liaw and J.W. Rose, Epitaxical Silicon Tehnology Edited by B>J> Baliga, Academic Press, Inc. 1986 pp. 56-67.

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