Rapid thermal processing apparatus for processing semiconductor

Details Rapid thermal processing apparatus for processing semiconductor Rapid thermal processing apparatus for processing semiconductor

1995-06-07

1998-01-20

Walberg, Teresa J.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219390, 219411, 118725, 118729, C23C 1600

Patent

active

057104077

ABSTRACT:
A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

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Edited by B. J. Baliga, "Epitaxial Silicon Technology," Academic Press, Inc., 1986, pp. 56-67.
H.M. Liaw and J.W. Rose, "Epitaxial Silicon Technology", Academic Press, Inc. 1986, pp. 56-67.

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