Electric resistance heating devices – Heating devices – Radiant heater
Reexamination Certificate
2007-09-10
2010-11-30
Robinson, Daniel (Department: 3742)
Electric resistance heating devices
Heating devices
Radiant heater
C219S395000
Reexamination Certificate
active
07844171
ABSTRACT:
A rapid thermal processing apparatus comprises a processing chamber which subjects a semiconductor substrate to rapid thermal processing. A substrate support part is arranged in the processing chamber and supports the substrate. A lamp part optically irradiates the substrate supported by the substrate support part and heats the substrate. A thermo sensor is provided to measure a temperature of the substrate. A temperature computing part computes the temperature of the substrate based on an output signal of the thermo sensor. A control part controls an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part. In this apparatus, the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a measured reflectivity of a surface of the substrate.
REFERENCES:
patent: 5154512 (1992-10-01), Schietinger et al.
patent: 5155336 (1992-10-01), Gronet et al.
patent: 5660472 (1997-08-01), Peuse et al.
patent: 5841110 (1998-11-01), Nenyei et al.
patent: 5848889 (1998-12-01), Tietz et al.
patent: 6072163 (2000-06-01), Armstrong et al.
patent: 6188838 (2001-02-01), Mikata et al.
patent: 6529686 (2003-03-01), Ramanan et al.
patent: 6570134 (2003-05-01), Suzuki et al.
patent: 7283734 (2007-10-01), Kubo
patent: 2004/0105670 (2004-06-01), Kusuda et al.
patent: 7-200077 (1995-08-01), None
patent: 10-020944 (1998-01-01), None
patent: 11-281487 (1999-10-01), None
patent: 2001-514441 (2001-09-01), None
patent: 2002-118071 (2002-04-01), None
patent: 2003-133248 (2003-05-01), None
patent: 2003-234303 (2003-08-01), None
Office Action dated Oct. 20, 2009 corresponding to Japanese patent application No. 2004-244051 with English translation.
Office Action dated Oct. 20, 2009 corresponding to Japanese patent application No. 2004-275191 with English translation.
Office Action dated Oct. 20, 2009 corresponding to Japanese patent application No. 2004-284592 with English translation.
Office Action dated Aug. 3, 2010 issued in Japanese patent application No. 2004-284592 with English translation.
Fujitsu Semiconductor Limited
Kratz Quintos & Hanson, LLP
Robinson Daniel
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