Electric heating – Metal heating – Of cylinders
Patent
1988-03-23
1989-08-15
Leung, Philip H.
Electric heating
Metal heating
Of cylinders
219 1077, 219518, 266 87, 373144, 432 45, 432128, H05B 606
Patent
active
048576891
ABSTRACT:
A semiconductor wafer processing furnace includes an elongated processing chamber enclosing a first zone and a second zone extending along a first reference axis, and a wafer support assembly having a support member and associated translation elements for selectively translating the support member between the zones, along the first reference axis, in response to an applied position signal. Temperature elements control the first and second zones to have selected first and second temperatures, respectively. A controller applies the position signal to the translation elements, in response to an applied control signal representative of a desired temperature of the region surrounding the support member. Responsive to the position signal, the translation elements position the support member along the reference axis such that the temperature of the region surrounding the support member substantially matches the desired temperature.
REFERENCES:
patent: 3136876 (1964-06-01), Crosthwait
patent: 3265470 (1966-08-01), Keller
patent: 3355158 (1967-11-01), Campbell et al.
patent: 3740859 (1973-06-01), Patton et al.
patent: 3935416 (1976-01-01), Cachat
patent: 4008387 (1977-02-01), Green et al.
patent: 4158758 (1979-06-01), Kunioka et al.
patent: 4195820 (1980-04-01), Berg
patent: 4245818 (1981-01-01), Elhaus et al.
J. C. Gelpey et al, "Rapid Annealing Using the Water-Wall Arc Lamp," Nuclear Instruments and Methods in Physics Research, 1985, pp. 316-320.
D. Aitken et al, "A New VLSI Compatible Rapid Thermal Processing System," Nuclear Instruments and Methods, 1987, pp. 622-626.
S. Leavitt, "RTP: On the Edge of Acceptance," Semiconductor International, Mar. 1987, pp. 64-70.
R. T. Fulks et al, "Rapid Isothermal Annealing of Ion Implantation Damage Using a Thermal Radiation Source," Appl. Phys. Lett. 39(8), 15 Oct. 1981, pp. 604-606.
J. C. C. Fan et al, "Transient Heating with Graphite Heaters for Semiconductor Processing," Appl. Phys. Lett., 1982, pp. 751-758.
T. O. Sedgwick, "Short Time Annealing," J. Electrochem. Soc., Feb. 1983, pp. 484-492.
High Temperature Engineering Corporation
Leung Philip H.
LandOfFree
Rapid thermal furnace for semiconductor processing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Rapid thermal furnace for semiconductor processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rapid thermal furnace for semiconductor processing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-123061