Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2006-04-11
2006-04-11
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S010000, C438S011000, C438S016000, C438S017000, C438S018000
Reexamination Certificate
active
07026171
ABSTRACT:
A rapid thermal annealing (“RTA”) process providing for an RTA equipment is disclosed. The RTA equipment has a pyrometer providing for measuring an operation parameter, e.g., a temperature of the RTA process. The RTA process comprises steps of proceeding a first RTA step to a wafer in the RTA equipment, then comparing a measured value of the operation parameter with a reference range of value of the operation parameter, thereafter proceeding a second RTA step to the wafer in the RTA equipment when the measured value of the operation parameter is in between the reference range of value of the operation parameter. When the measured value of the operation parameter is out of the reference range of value of the operation parameter, the RTA equipment is turned off, and the wafer is unloaded from the RTA equipment and loaded into another RTA equipment to complete the RTA process.
REFERENCES:
patent: 5831249 (1998-11-01), Rohner et al.
patent: 6521496 (2003-02-01), Roy et al.
Chang Y. Y.
Chou Shih-Liang
Lee L. H.
Lien Wen-Cheng
Lin Tsung-De
Hogans David L.
Jianq Chyun IP Office
Macronix International Co. Ltd.
Thompson Craig A.
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