Rapid thermal annealing of superconducting oxide precursor films

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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427 62, 427 63, 4272553, 4271263, 20419224, 428702, C23C 1400

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active

049120875

ABSTRACT:
This invention is directed to a method of preparing a superconducting metal oxide film on silicon and silicon dioxide substrates. More particularly, the method comprises depositing by physical vapor deposition a superconducting metal oxide precursor directly on the substrate and then subjecting it to rapid thermal annealing in an oxygen atmosphere.

REFERENCES:
patent: 4316785 (1982-02-01), Suzuki et al.
Gurvitch et al "Preparation and Substrate Reactions of Superconducting Y--B.sub.a --Cu--O Films", Appl. Phys. Lett 51(13) p. 1027 (1987).
Lathrop et al "Production of YB.sub.a Cu.sub.3 O.sub.7-y Superconducting Thin Films In Situ by High-Pressure Reactive Evaporation and Rapid Thermal Annealing", Appl. Phys. Lett. 51(19) p. 1554 (1987).
Bullock et al. "Production of Superconducting Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x Thin Films by D.C. Diode Sputtering and Annealing", AIP Conf. Proc. No. 165 p. 71 (1988).
S. Y. Lee et al "Microprobe Characterization of Sputtered High Tc Superconducting Films on Silicon", AIP Conf. Proc. No. 165 p. 427 (1988).
Mogro-Campero et al "High Temperature Superconductors II", MRS edited by Capone et al, Pittsburgh, 1988, p. 113.
S. J. Lee et al. "Preparation of Y--B.sub.a -Cu--O Thin Films on MgO by dc Magnetron Sputtering From a Stoichiometric Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-w Target", Appl. Phys. Lett. 51(15) p. 1194 (1987).

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