Rapid thermal annealing of silicon dioxide for reduced hole trap

Details Rapid thermal annealing of silicon dioxide for reduced hole trap Rapid thermal annealing of silicon dioxide for reduced hole trap

1984-07-30

1986-04-29

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 148DIG4, 357 91, H01L 21265, B23K 2700

Patent

active

045854920

ABSTRACT:
Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric breakdown of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000.degree. C.
For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000.degree. C. for a duration on the order of 100 seconds, depending on the oxide thickness.
Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.

REFERENCES:
patent: 3615873 (1971-10-01), Sluss, Jr. et al.
patent: 4431900 (1984-02-01), Delfino et al.
Powell et al, Jour. Vac. Sci. Technol. 20 (1982) 33.
Lai et al, Jour. Appl. Phys. 52 (1981) 5691.
Sieber et al, Phys. Stat. Sol. 749 (1982) K-9.
Greeuw et al, Solid St. Electronics 27 (Jan. 1984) 77.
Crosthwait et al, in Laser . . . Solid Interactions . . . Processing, ed. Gibbons, North-Holland, N.Y., 1980, p. 399.

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