Rapid thermal annealing of silicon dioxide for reduced electron

Details Rapid thermal annealing of silicon dioxide for reduced electron Rapid thermal annealing of silicon dioxide for reduced electron

1984-07-30

1986-01-28

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 148188, 148DIG4, 148DIG118, H01L 21263, B23K 2700

Patent

active

045669139

ABSTRACT:
Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including decreased water content and reduced trapping of electrons, by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing inert gas, to heating radiation from a halogen lamp for a duration on the order of ten seconds to achieve annealing temperature in the range 600C.-800C.

REFERENCES:
patent: 3556880 (1971-01-01), Heiman
patent: 4229232 (1980-10-01), Kirkpatrick
patent: 4406053 (1983-09-01), Takasaki et al.
patent: 4482393 (1984-11-01), Nishiyama et al.
Kato et al., Jour. Electrochem. Soc. 131 (May 1984) 1145.
Kadyrakunov et al., Phys. Stat. Sol. 70a (1982) K-15.

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