Rapid thermal annealing for semiconductor substrate by using inc

Details Rapid thermal annealing for semiconductor substrate by using inc Rapid thermal annealing for semiconductor substrate by using inc

1991-10-15

1994-01-18

Kunemund, Robert

Fishing, trapping, and vermin destroying

437174, 437247, 437942, H01L 21477

Patent

active

052799735

ABSTRACT:
Rapid thermal annealing for heat-treating a semiconductor substrate is provided without damaging the substrate surface After the semiconductor substrate is placed in an annealing apparatus having an incoherent light source, an inert gas containing a very small amount of an oxygen gas is introduced into the annealing apparatus, while applying an incoherent light to the substrate surface from the incoherent light source. In this case, the oxygen concentration in the inert gas is defined by 10 to 1000 ppm.

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Wolf et al., "Silicon processing for the VLSI Era, vol. I: Process technology", Lattice Press, 1986 pages.

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