Thermal measuring and testing – Thermal calibration system
Reexamination Certificate
2004-07-26
2008-11-25
Lefkowitz, Edward (Department: 2855)
Thermal measuring and testing
Thermal calibration system
C374S141000, C374S043000, C374S179000, C374S121000
Reexamination Certificate
active
07455448
ABSTRACT:
A method of determining the degree of calibration of an RTP chamber (1) includes providing a test wafer having a deposited sichrome layer (22) of sheet resistance Rsi on an oxide layer (21) formed on a silicon substrate (20). The test wafer is annealed in the RTP chamber for a selected duration at a selected anneal temperature which is measured by the a permanent thermocouple or pyrometer (8). The sheet resistance of the annealed sichrome is measured, and a sheet resistance change ΔRs=Rsi−Rsf is computed. The “actual” value of the anneal temperature is determined from predetermined characterizing information relating ΔRs to a range of values of anneal temperature. The RTP chamber is re-calibrated if in accordance with the value of ΔRs if the difference between the “actual” value of the anneal temperature and the value measured by the permanent thermocouple or pyrometer exceeds an acceptable error. The basic technique can be utilized to determine an anneal time and anneal duration for annealing sichrome resistors to precisely adjust the sheet resistance or TCR thereof.
REFERENCES:
patent: 4969748 (1990-11-01), Crowley et al.
patent: 6004029 (1999-12-01), Moslehi et al.
patent: 6033922 (2000-03-01), Rowland et al.
patent: 6106148 (2000-08-01), Moslehi et al.
patent: 6171922 (2001-01-01), Maghsoudnia
patent: 6200023 (2001-03-01), Tay et al.
patent: 6247842 (2001-06-01), Kitch et al.
patent: 6280081 (2001-08-01), Blau et al.
patent: 6293696 (2001-09-01), Guardado
patent: 6517235 (2003-02-01), Zhu et al.
patent: 6635501 (2003-10-01), Rowland
patent: 7192494 (2007-03-01), Chen et al.
Barnes Barbara M.
Beach Eric W.
Jaiswal Rajneesh
Abyad Mirna
Brady III Wade J.
Jagan Mirellys
Lefkowitz Edward
Texas Instruments Incorporated
LandOfFree
Rapid thermal anneal equipment and method using sichrome film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Rapid thermal anneal equipment and method using sichrome film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rapid thermal anneal equipment and method using sichrome film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4041722