Rapid-switching rotating disk reactor

Coating apparatus – Gas or vapor deposition – Work support

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118730, 437 87, 29 2501, C23C 1600, H01L 2120

Patent

active

052640400

ABSTRACT:
A rapid switching rotating disk reactor has an elongated injector for injecting an inert gas into the chamber of a rotating disk reactor. The nozzle of the injector is proximate to the center of the rotating wafer for the purpose of providing an inert gas flow to produce an inert gas boundary layer above the wafer. Whenever the environment of the chamber is to be changed by an introduction of another fluid medium, the injector is activated to provide an inert boundary layer atop the semiconductor wafer, wherein any processing caused by the reactive gases in the chamber is prevented from occurring. Once the chamber is filled with the subsequent fluid medium, the injector is turned off in order for the next processing to commence.

REFERENCES:
patent: 4667076 (1987-05-01), Amada
patent: 4878898 (1989-11-01), Purdes
patent: 5070813 (1991-12-01), Sakai et al.
Patent Abstracts of Japan, vol. 8, No. 59 (E-232) (1496) Mar. 17, 1984 & JP.A.58 209 117 (Nippon Denshin Denwa Kosha) Dec. 6, 1983.
Journal of Crystal Growth, vol. 107, No. 1/4, Jan. 1, 1991, Amsterdam NL, G. S. Tompa et al., "MOVPE growth of II-VI compounds in a vertical reactor with high-speed horizontal rotating disk", pp. 198-202.
Emcore Product Brochure, Emcore Corp. entitled, "Commitment" (Date Unknown).

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