Rapid rate reactive sputtering of a group IVb metal

Details Rapid rate reactive sputtering of a group IVb metal Rapid rate reactive sputtering of a group IVb metal

1983-04-04

1984-01-31

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

044288115

ABSTRACT:
A metal from group IVb of the periodic table is used as the target in a reactive deposition process. An inert gas such as argon is admitted within the chamber housing the target. Electrical power at a constant level is supplied to the target, ionizing the inert gas so that the ions bombard the metal target and initiate sputtering. A controlled flow of a reactive gas such as nitrogen is then admitted to the chamber and controlled in such a way that the metal deposition rate is not lowered. The amount of the reactive gas is constantly sampled to provide a control signal used to regulate admission of the reactive gas at the proper rate for most effective deposition of the metal onto the substrate. Closed loop systems regulate the level of electrical power supplied to the target, rate of admission of the inert gas, and rate of admission of the reactive gas.

REFERENCES:
patent: 3616405 (1971-10-01), Beaudry
patent: 3632494 (1972-01-01), Herte et al.
patent: 3734620 (1973-05-01), Cade
patent: 3738926 (1973-06-01), Westwood et al.
patent: 4036167 (1977-07-01), Lu
patent: 4043889 (1977-08-01), Kochel
patent: 4124474 (1978-11-01), Bomchil et al.
patent: 4166783 (1979-09-01), Turner et al.
patent: 4166784 (1979-10-01), Chapin et al.
patent: 4172020 (1979-10-01), Tisone et al.
patent: 4201645 (1980-05-01), Riegert
patent: 4283260 (1981-08-01), Thomas et al.
patent: 4336119 (1982-06-01), Gillery
patent: 4379040 (1983-04-01), Gillery
patent: 4379743 (1983-04-01), Nakasukasa et al.
Coburn et al., J. Appl. Phys. (45) #4, 1974, pp. 1779-1786.
Greene et al., J. Vac. Sci. Technol. (10), 1973, pp. 1144-1148.
Greene, J. Vac. Sci. Technol. 15, 1978, pp. 1718-1726, 203-204.
Steinbruchel et al., J. Vac. Sci. Technol. 16 (1979), pp. 251-254.

Affiliated with

Also associated with

Rating

Rapid rate reactive sputtering of a group IVb metal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rapid rate reactive sputtering of a group IVb metal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rapid rate reactive sputtering of a group IVb metal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2344571