Rapid plasma hydrogenation process for polysilicon MOSFETs

Details Rapid plasma hydrogenation process for polysilicon MOSFETs Rapid plasma hydrogenation process for polysilicon MOSFETs

1992-02-21

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437937, 437247, 148DIG128, H01L 21324

Patent

active

052504441

ABSTRACT:
A method for rapid plasma hydrogenation of semiconductor devices is provided in which the hydrogenation is conducted in two steps, the first step being conducted at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen diffuses out of said semiconductor device; and in the second step, the semiconductor device is cooled to a temperature at which out-diffusion is substantially avoided while the hydrogenation plasma is maintained.

REFERENCES:
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4315782 (1982-02-01), Tarng
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4605447 (1986-08-01), Brotherton et al.
patent: 4943837 (1990-07-01), Konishi et al.
patent: 5112764 (1992-05-01), Mitra et al.
Campbell et al, Enhanced Conductivity in Plasma-Hydrogenated Polysilicon Films, Appl. Phys. Lett., 36, (7) pp. 604-606, Apr. (1980).
Hasegawa et al, Plasma-Hydrogenation Effects on Conductivity and Electron Spin Resonance in Undoped . . . , J. Appl. Phys., 53 (7) pp. 5022-5026, Jul. (1982).
Kamins, Electrical Properties of Polycrystalline-Silicon Thin Films, Proceedings of the Fifth . . . , 1986, pp. 235-249, (1986).
Nazakawa et al, Mechanism of a Hydrogenating Polycrystalline Silicon in Hydrogen Plasma Annealing, Appl. Plys., Lett., 51 (20) pp. 1623-1625, Nov. (1987).
Rodder et al, Utilization of Plasma Hydrogenation in Stacked SRAM's with Poly-Si PMOSFET's and . . . , IEEE Electron Device Letters, vol. 12, No. 5, pp. 233-235, May, 1991.
Wu et al, Passivation Kinetics of Two Types of Defects in Polysilicon TFT . . . IEEE Electron Device Letters, vol. 12, No. 4, pp. 181-183, Apr. 1991.
Mitra et al, Mechanism of Plasma Hydrogenation of Polysilicon . . . J. of the Electrochemical Society, vol. 138, No. 11, pp. 3420-3424, Nov. 1991.

Affiliated with

Also associated with

Rating

Rapid plasma hydrogenation process for polysilicon MOSFETs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rapid plasma hydrogenation process for polysilicon MOSFETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rapid plasma hydrogenation process for polysilicon MOSFETs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1003235