Rapid method for sub-critical fatigue crack growth evaluation

Details Rapid method for sub-critical fatigue crack growth evaluation Rapid method for sub-critical fatigue crack growth evaluation

2005-08-22

2009-02-24

Punnoose, Roy M (Department: 2886)

Optics: measuring and testing

Material strain analysis

C356S034000, C073S799000, C073S800000, C073S801000

Reexamination Certificate

active

07495749

ABSTRACT:
In a method and system for evaluating sub-critical fatigue crack growth in a semiconductor device, a plurality of energy pulses generated by an energy source are repeatedly impinged onto the semiconductor device for a predefined time interval. The repeated impinging of the plurality of energy pulses induces a mechanical stress within the semiconductor device. The induced mechanical stress, maintained below a threshold and repeated for a predefined number of cycles, causes a formation of a sub-critical fatigue crack within the semiconductor device. A detector detects the presence of the sub-critical fatigue crack leading to a fatigue failure. A rapid determination of a pass or fail status for a fatigue test of the semiconductor device is made by comparing a total number of cycles to fatigue failure to a predefined benchmark.

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