Rapid cooling of CZ silicon crystal growth system

Details Rapid cooling of CZ silicon crystal growth system Rapid cooling of CZ silicon crystal growth system

1996-01-22

1997-10-14

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117208, C30B 2520

Patent

active

056767510

ABSTRACT:
A Czochralski method for producing monocrystals wherein a single crystal silicon rod is pulled from a silicon melt contained in a crucible within a chamber. After pulling the single crystal silicon rod from a silicon melt in a chamber, the chamber is cooled by flowing a gas having a thermal conductivity of at least about 55.times.10.sup.-5 g.cal./(sec..multidot.cm.sup.2)(.degree.C./cm) at 800.degree. K into the chamber. The preferred cooling gas is a helium-containing gas.

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patent: 5178720 (1993-01-01), Frederick
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