Rapid alteration of ion implant dopant species to create regions

Details Rapid alteration of ion implant dopant species to create regions Rapid alteration of ion implant dopant species to create regions

1981-06-19

1983-05-31

Roy, Upendra

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148187, 2504922, 2504923, 357 91, H01L 21203, H01L 21263

Patent

active

043859461

ABSTRACT:
A molecular beam epitaxial method of fabricating a semiconductor device is disclosed wherein the dopant is implanted by establishing a plasma containing ions of the dopant and the ions are coupled through a drift chamber to impinge on the growing substrate surface. The plasma formed in the ion gun has ions of boron and arsenic and therefore the dopants selected for implantation can be determined by setting a mass filter present in the ion gun. A change to the dopant of the opposite conductivity type can be accomplished in seconds by simply readjusting the mass filter in the ion gun.

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Bean et al., Electrochem. Soc. Meeting, Boston, Mass. 1979, p. 334.

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