Random access junction field-effect floating gate transistor mem

Details Random access junction field-effect floating gate transistor mem Random access junction field-effect floating gate transistor mem

1977-07-11

1978-11-21

Hecker, Stuart N.

Static information storage and retrieval

Floating gate

Particular biasing

357 23, G11C 1140

Patent

active

041269004

ABSTRACT:
JFET memory structures, in particular for RAM's with non-destructive reading-out of the charge state of a floating gate electrode in which the primary selection is realized by means of capacitive coupling with the floating gate electrode. The secondary selection takes place on one of the main electrodes of the JFET structures in which the other main electrode can be connected to the supply. By means of a second common gate electrode the pinch-off voltage of the channels can be adjusted so that the channels are non-conductive in the non-selected condition and a good detection of the information state is obtained in the selected condition.

REFERENCES:
patent: 3814992 (1974-06-01), Kump et al.
patent: 3906296 (1975-09-01), Maserjian et al.
patent: 3984822 (1976-10-01), Simko et al.
Chang et al., Random-Access Junction Field-Effect Transistor Memory, IBM Technical Disclosure Bulletin, vol. 16, No. 1, 6/73, p. 255.

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