Ramp cathode structures for vacuum emission

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

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257191, 257655, 257 10, 313542, 313543, 313346R, 313373, 313374, H01L 2906, H01L 2912, H01J 3100

Patent

active

057124906

ABSTRACT:
A photocathode device is disclosed including an active layer, a composition ramp layer and an emission layer including an emission surface. The active layer, ramp layer and emission layer each have both a predetermined material composition and a predetermined doping level for maintaining the conduction band of the device flat until the emission surface which functions to increase the photoresponse of the device.

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patent: 5463275 (1995-10-01), Chen et al.
A.J. Kennedy, "Tunable Field Assisted Double Heterojunction Infrared Photocathodes," 1973 Conference on Electron Device Technique, May 1973, pp. 51-56.

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