Raised source and drain igfet device fabrication

Details Raised source and drain igfet device fabrication Raised source and drain igfet device fabrication

1976-05-21

1978-02-07

Van Horn, Charles E.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 29571, 156643, 156649, 156657, 156662, H01L 21265

Patent

active

040725456

ABSTRACT:
Disclosed is an integrated circuit field effect transistor having a source and drain which protrude above the silicon substrate so as to create shallow junctions with the substrate while maintaining a relatively low sheet resistivity in the region. Two self-aligned source and drain fabrication processes are disclosed for the device. The first process yields a polysilicon field shield and the second process yields a field region composed of thermal silicon dioxide.

REFERENCES:
patent: 3652905 (1972-10-01), Page et al.
patent: 3674551 (1972-07-01), Athanas
patent: 3699646 (1972-10-01), Vadasz
patent: 3750268 (1973-08-01), Wang
patent: 3764413 (1973-10-01), Kakizaki et al.
patent: 3895390 (1975-07-01), Meiling et al.
patent: 3940288 (1976-02-01), Takagi et al.
patent: 3996657 (1976-12-01), Simko et al.
Iwamatsu et al. "A New Isolation Structure for High Density LSI" International Electron Device Conference, Wash., D.C. (12/19/73), pp. 244-247.

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