Raised bonding pad

Details Raised bonding pad Raised bonding pad

1978-11-03

1981-05-19

Wojciechowicz, Edward J.

357 51, 357 61, H01L 2348

Patent

active

042688493

ABSTRACT:
A bonding pad structure for an LED includes a first layer of nickel-chromium in contact with the contact face of a gallium arsenide wafer with further layers of either gold, palladium, or both, with palladium being the top layer of the first pad structure laid down by vaporization with a raised structure overlying the first structure by means of plating and including layers of nickel, gold and/or other conducting metal.

REFERENCES:
patent: 4164607 (1979-08-01), Thiel et al.

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