Raised base bipolar transistor structure and its method of fabri

Details Raised base bipolar transistor structure and its method of fabri Raised base bipolar transistor structure and its method of fabri

1989-12-01

1991-05-21

Jackson, Jr., Jerome

357 35, 357 59, H01L 2972, H01L 2904

Patent

active

050179900

ABSTRACT:
The invention relates to a bipolar transistor structure which includes a layer of semiconductor material having a single crystal raised base, a single crystal or polycrystalline emitter and adjacent polycrystalline regions which provide an electrical connection to the emitter. The invention also relates to the method of fabricating such a structure and includes the step of depositing a conformal layer of semiconductor material of one conductivity type over a region of opposite conductivity and over insulation such that single crystal and polycrystalline regions form over single crystal material and insulation, respectively. In a subsequent step, a layer of opposite conductivity type semiconductor material is deposited on the first layer forming single crystal or polycrystalline material over single crystal and polycrystalline material over polycrystalline. Then, in a final step, the structure is subjected to an out-diffusion step which simultaneously forms a single crystal emitter region of opposite conductivity type, a p-n junction in the one conductivity type single crystal region and regions of opposite conductivity type which act as an interconnection to the emitter region.

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