Radioactive rays detection semiconductor device

Details Radioactive rays detection semiconductor device Radioactive rays detection semiconductor device

1998-05-13

2000-02-01

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

25037007, 25037009, 257429, 257347, 438 57, H01L 2714, H01L 3100, H01L 31115, G01J 124

Patent

active

060206195

ABSTRACT:
The present invention intends to provide a radioactive rays detection semiconductor device comprises a substrate, an insulating layer formed on the substrate, p-type Si films formed on the insulating layer and equal in resistance value change rates due to temperature change and different in thickness so as to differ in the changes of the resistance values corresponding to the change of the total dose of the radioactive rays, an insulating film covering the p-type Si films, electrodes deposited in contact holes which are formed in the insulating film to reach both end of the p-type Si films, and Al wiring connecting the electrodes close to each other.

REFERENCES:
patent: 4213045 (1980-07-01), Fraass et al.
patent: 5339066 (1994-08-01), Marques et al.
M. Soubra, et al. (Apr. 1994), "Evaluation of a dual bias metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter", Medical Physics, vol. 21, No. 4, pp. 567-572.

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