Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Patent
1998-02-26
2000-07-25
Wells, Kenneth B.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
327537, H03K 301
Patent
active
060940883
ABSTRACT:
In a switch circuit, at least one transistor has a source, a drain, a gate for receiving a control voltage and a back gate. At least one resistor is connected between the back gate of the transistor and a ground terminal.
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H. Uda et al., "Miniaturization and High Isolation of a GaAs SPDT Switch IC Mounted in Plastic Package", Technical Report of ICICE, ED95-165, MW95-150, ICD95-221 (1996).
Y. Ikeda et al., "A Novel Resonant-type GaAs SPDT Switch IC with Low Distortion Characteristics for 1.9 GHz Personal Handy-Phone System", Technical Report of ICICE, ED96-5 SDM96-42, ICD96-62 (1996).
Y. Iyama et al, "L-Band SPDT Switch using Si-MOSFET", Technical Report of IEICE, SAT95-82, NW95-124, (1995).
Robert J. Caverly, "Distortion in GaAs MESFET Switch Circuits", Microwave Journal, pp. 106-114, Sep. 1994.
K. Miyatsuji et al, "A GaAs High Power RF Single Pole Dual Throw Switch IC for Digital Mobile Communication System", IEEE Journal of Solid-State Circuits, vol. 30, No. 9, pp. 979-983 Sep. 1995.
Y. Ota et al., High Isolation and Low Insertion Loss Switch IC Using GaAs MESFET IEEE Trans. of Microwave and Techniques, vol. 43, No. 9, pp. 2175-2177, Sep. 1995.
NEC Corporation
Wells Kenneth B.
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