Radio-frequency switch circuit and semiconductor device

Details Radio-frequency switch circuit and semiconductor device Radio-frequency switch circuit and semiconductor device

2008-06-24

2008-06-24

Takaoka, Dean O (Department: 2817)

Wave transmission lines and networks

Plural channel systems

Having branched circuits

C333S101000

Reexamination Certificate

active

07391282

ABSTRACT:
Switch sections composed of a plurality of FETs111to118and121to128connected in series are provided between input/output terminals161and162and ground terminals181and182, and between the input/output terminals161to163. A plurality of gate bias resistors131to138, 141to148are also provided. One terminal of each gate bias resistor is connected to a gate electrode of a corresponding one of the FETs111to118and121to128, while a control voltage171and172for switching an ON state and an OFF state of the switch section is applied to the other terminal. Among the FETs included in each switch section, concerning the FETs114, 115, 124, and125to which signal power is applied when the switch section is in the OFF state, the gate bias resistors134, 135, 144, and145connected to the gate electrodes are set to have a highest resistance value.

REFERENCES:
patent: 5774792 (1998-06-01), Tanaka et al.
patent: 6118985 (2000-09-01), Kawakyu et al.
patent: 2003/0141518 (2003-07-01), Yokogawa et al.
patent: 2003/0181167 (2003-09-01), Iida
patent: 2004/0061546 (2004-04-01), Kushitani et al.
patent: 2005/0047038 (2005-03-01), Nakajima et al.
patent: 2005/0159112 (2005-07-01), Iida
patent: 2005/0159113 (2005-07-01), Iida
patent: 2006/0261912 (2006-11-01), Miyagi et al.
patent: 08-23270 (1996-01-01), None
patent: 10-150395 (1998-06-01), None
patent: 11-46101 (1999-02-01), None
patent: 2000-295001 (2000-10-01), None
patent: 2001-68984 (2001-03-01), None
patent: 2002-222817 (2002-08-01), None
patent: 2002-246942 (2002-08-01), None
patent: 2002-271103 (2002-09-01), None
patent: 2004-104394 (2004-04-01), None
Japanese Office Action issued in corresponding Japanese Patent Application No. JP 2005-321215, dated Sep. 11, 2006.

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