Radio frequency power amplifying module with hetero junction...

Amplifiers – With semiconductor amplifying device – Including gain control means

Reexamination Certificate

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C330S296000, C330S307000

Reexamination Certificate

active

07486142

ABSTRACT:
The present invention is directed to compensate electric properties of an RF power module depending on changes with time, temperature dependency, variations, and the like of grounded emitter current amplification factor of an HBT. A compound semiconductor integrated circuit supplies reference current of a reference HBT depending on hFE of an HBT to an input terminal of a first current mirror of a bias circuit of a silicon semiconductor integrated circuit. The base of an output HBT of the compound semiconductor integrated circuit is biased with bias current which increases in response to decrease in hFE of the HBT from an output of the first current mirror of the silicon semiconductor integrated circuit.

REFERENCES:
patent: 7345547 (2008-03-01), Wang et al.
“GaAs Heterojunction Bipolar Transistor Device and IC Technology for High-Performance Analong and Microwave Applications” by Kim, et al., IEEE Transactions on Microwave Theory and Techniques, vol. 37, No. 9, Sep. 1989.1286-1303.

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