Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1995-05-08
1997-01-07
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330302, 330305, H03F 360, H03F 3191
Patent
active
055921221
ABSTRACT:
In an RF power amplifier, an input-side RF terminal is connected to a gate of an FET via an input-side matching line. A source of the FET is grounded. A drain of the FET is connected to an output-side RF terminal via an output-side matching line. To a line connected to the drain of the FET, a circuit for controlling an output impedance for the secondary harmonic wave is connected, including a first line and a first capacitor. To a line connected to the gate of the FET, a circuit for controlling an input impedance for the secondary harmonic wave is connected, including a second line and a second capacitor. The length of the second line is set so that an electric length thereof becomes longer than one-fourth of the wavelength for the fundamental wave frequency. Thus, an impedance for the harmonic wave is controlled at the input side of the power transistor.
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Bahl et al, "Class-B Power MMIC Amplifiers with 70% Power-Added Efficiency," IEEE Transactions on Microwave Theory and Techniques, 37 (1989) Sep. No. 9, N.Y., pp. 1315-1320.
Snider, IEEE Transactions on Electron Devices, vol. ED-14, No. 12, pp. 851-857, 1967, "A Theoretical Analysis and Experimental Confirmation of the Optimally Loaded and Overdriven RF Power Amplifier."
Nakayama et al, Technical Report of IEICE, ED93-170, NW 93-127, ICD93-185, pp. 17-22, 1994, "UHF Band Low-Voltage High-Efficiency FET Amplifier."5
Renner, Otto, Boisselle, Sklar
Ishikawa Osamu
Masahiro Maeda
Takehara Hiroyasu
Matsushita Electric - Industrial Co., Ltd.
Mottola Steven
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