Amplifiers – With semiconductor amplifying device – Including signal feedback means
Patent
1996-10-10
1998-06-16
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including signal feedback means
327184, 330 85, 330109, 330251, H03F 134
Patent
active
057677433
ABSTRACT:
An RF power amplifier includes an input-side tertiary harmonic wave control circuit and an output-side tertiary harmonic wave control circuit, respectively connected to a gate and a drain of a signal amplification FET. The RF power amplifier also includes a tertiary harmonic wave feedback circuit connected in parallel with the signal amplification FET. The tertiary harmonic wave feedback circuit includes an input-side tertiary harmonic wave bandpass filter, a tertiary harmonic wave amplification FET, a phase shifter and an output-side tertiary harmonic wave bandpass filter. These circuit elements are connected in series. Due to such a configuration, a voltage waveform and a current waveform each having a nearly rectangular shape can be easily generated at an output terminal (a drain) of the signal amplification FET, not only in the region around the efficiency saturation point whore the FET operates in a non-linear mode, but also in other linear-operation regions. Thus, the RF power amplifier can operate with improved efficiency.
REFERENCES:
Sachihiro Toyoda, IEEE MTT-S Digest, 1993 "High Efficiency Single and Push-Pull Power Amplifiers", pp. 277-280.
David M. Snider, IEEE Transactions on Electron Devices, vol. ED.-14, No. 12, Dec. 1967, "A Theoretical Analysis and Experimental Confirmation of the Optimally Loaded and Overdriven RF Power Amplifier", pp. 851-857.
U.S. Application Serial No. 08/436,142 in the name of M. Maeda et al., filed on May 8, 1995.
Maeda Masahiro
Morimoto Shigeru
Matsushita Electric - Industrial Co., Ltd.
Mullins James B.
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