Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Reexamination Certificate
2006-08-29
2006-08-29
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
C330S288000
Reexamination Certificate
active
07098740
ABSTRACT:
There is provided not only a radio frequency power amplifier using an SiGe HBT subject to a little amplification distortion, but also a communication system using the same. A conventional radio frequency power amplifier provides base bias paths of transistors Q1through QN(SiGe HBT) with bias resistors R11through R1Nhaving resistance values three to five times higher than those of a ballast resistor attached to each transistor's base. A coil LBis provided in parallel with the bias resistor as a means for compensating a voltage drop due to direct current component IDCflowing through the bias resistor. Addition of the bias resistor suppresses non-linearity of low-frequency variations in an output current. Addition of the coil compensates for voltage drop. Accordingly, the maximum linear output power can be improved. As a result, it is possible to provide the power amplifier subject to a little amplification distortion within a wide output range.
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Kondo Masao
Masuda Toru
Washio Katsuyoshi
A. Marquez, Esq. Juan Carlos
Choe Henry
Fisher Esq. Stanley P.
Reed Smith LLP
Renesas Technology Corp.
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