Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2006-12-19
2008-12-23
Mottola, Steven J (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S310000
Reexamination Certificate
active
07468636
ABSTRACT:
A radio frequency power amplifier1includes a former-stage transistor2, a latter-stage transistor3, and an inter-stage matching circuit4for connecting the former-stage transistor2and the latter-stage transistor3. The inter-stage matching circuit4includes a high-pass filter circuit including a transfer line m1, a capacitor C1and a capacitor C2; and a transfer line m2with which a passage phase of a secondary harmonic signal is 15 degrees or greater.
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patent: 5818880 (1998-10-01), Kriz et al.
patent: 2002/0118067 (2002-08-01), Hirayama
patent: 8-37433 (1996-02-01), None
Akira Inoue, et al., “Analysis of Class-F and Inverse Class-F Amplifiers,” Technical Report of IEICE, 2001, pp. 29-35, IEICE.
Akira Inoue, et al., “The Efficiency of Class-F and Inverse Class-F Amplifiers,” IEICE Electronic Society, 2004, pp. 61.
Makihara Hirokazu
Matsuda Shingo
Tateoka Kazuki
McDermott Will & Emery LLP
Mottola Steven J
Panasonic Corporation
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