Radio frequency power amplifier

Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement

Reexamination Certificate

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Details

C330S310000, C330S133000, C330S136000

Reexamination Certificate

active

07439809

ABSTRACT:
There are provided an RF power amplifier transistor (2), a bias supply circuit (51) which supplies a bias current to the base of the RF power amplifier transistor and a bias control circuit (52) connected between the base of the RF power amplifier transistor and bias supply circuit, and the bias control circuit is connected to the power supply (32) of the RF power amplifier transistor, thus realizing high efficiency of the RF power amplifier when the power level is low and improving the temperature characteristic of the power amplifier when the power level is low.

REFERENCES:
patent: 6744321 (2004-06-01), Noh et al.
patent: 6753734 (2004-06-01), Arell et al.
patent: 6806775 (2004-10-01), Abe
patent: 6990323 (2006-01-01), Prikhodko et al.
patent: 7242252 (2007-07-01), Taylor
patent: 7271662 (2007-09-01), Akamine et al.
patent: 2003051720 (2003-02-01), None

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