Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2006-04-17
2008-10-21
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
C330S310000, C330S133000, C330S136000
Reexamination Certificate
active
07439809
ABSTRACT:
There are provided an RF power amplifier transistor (2), a bias supply circuit (51) which supplies a bias current to the base of the RF power amplifier transistor and a bias control circuit (52) connected between the base of the RF power amplifier transistor and bias supply circuit, and the bias control circuit is connected to the power supply (32) of the RF power amplifier transistor, thus realizing high efficiency of the RF power amplifier when the power level is low and improving the temperature characteristic of the power amplifier when the power level is low.
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patent: 6806775 (2004-10-01), Abe
patent: 6990323 (2006-01-01), Prikhodko et al.
patent: 7242252 (2007-07-01), Taylor
patent: 7271662 (2007-09-01), Akamine et al.
patent: 2003051720 (2003-02-01), None
Iwata Motoyoshi
Takehara Hiroyasu
Yamauchi Hiroyuki
Matsushita Electric - Industrial Co., Ltd.
Nguyen Patricia
Steptoe & Johnson LLP
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