Coating apparatus – Gas or vapor deposition – With treating means
Patent
1990-10-16
1991-10-01
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
C23C 1650
Patent
active
050523392
ABSTRACT:
An improved capacitively coupled radio frequency-plasma enhanced chemical vapor deposition (PECVD) apparatus and process are disclosed for depositing a uniform coating of material on substrates. The apparatus includes a secondary electrode defining a reaction zone within an outer chamber and an RF electrode in concert with the secondary electrode for generating a plasma within the reaction zone. The electrode comprising a base and a finger extending through the reaction zone for distributing a plasma field uniformly throughout the reaction zone. The process comprises heating a substrate to a deposition temperature in the range of about 300.degree. to 650.degree. C. Reactant gases are introduced into the PECVD reactor and a coating of about 0.2 to about 20 .mu.m is deposited onto the heated substrate. This low temperature process is particularly adapted to coating three-dimensional objects of metals, metal alloys and mixtures of metals.
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Dyer Paul N.
Garg Diwakar
Halverson Ward D.
Vakerlis George
Air Products and Chemicals Inc.
Bueker Richard
Gourley Keith D.
Marsh William F.
Simmons James C.
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