Amplifiers – With semiconductor amplifying device – Integrated circuits
Reexamination Certificate
2005-01-18
2005-01-18
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Integrated circuits
C330S295000
Reexamination Certificate
active
06844783
ABSTRACT:
Radio frequency monolithic power amplifier layout techniques for the purpose of the invention is for improved thermal and electrical performance of RF monolithic power amplifiers. The inventive device includes the main components of the invention is to exploit layout techniques to improve the thermal and electrical performances. A technique, named input feeding phase equalizer, is invented to achieve better heat dissipating performance. A second technique, named grounding equalizer, is invented to achieve better electrical performance. A third technique, named staggered transistor column, is invented to achieve better heat dissipation performance. The electrical length between the input to the input stage of a2n-column cells is topologically altered to achieve input feeding phase equalization. The electrical length between the ground to the ground stage of a2n-column cells is topologically altered to achieve distance equalization. The rows of transistors of a2n-column cells are staggered to achieve more uniformed heat dissipation.
REFERENCES:
patent: 4429416 (1984-01-01), Page
patent: 4897617 (1990-01-01), Milberger et al.
patent: 5784327 (1998-07-01), Hazani
patent: 5952886 (1999-09-01), Buer et al.
Sun Howard J.
Wu Kang
Araftek, Inc.
Nguyen Patricia
LandOfFree
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