Radio frequency monolithic integrated circuit and method for...

Telecommunications – Transmitter and receiver at same station – Radiotelephone equipment detail

Reexamination Certificate

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C455S333000, C361S748000, C361S764000

Reexamination Certificate

active

06987983

ABSTRACT:
The purpose of this invention is to realize a radio frequency monolithic integrated circuit high in performance, small in size and low in cost, where transistors and passive elements are arranged on a chip in which a conductive silicon substrate functions as a ground. Since the electromagnetic fields of passive elements induce a current in a conductive silicon substrate, a loss due to generation of Joule heat or the like occurs to lead to deterioration of the performance of the passive elements. To solve this problem, an SOI layer comprising a semiconductor layer having a large thickness and a high resistivity and a conductive silicon substrate is used, and passive elements and an active element are formed on the same substrate. Alternatively, a cavity is provided in the conductive substrate directly beneath the SOI layer in the region where the passive elements are formed, thereby attaining the object.

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patent: 5752182 (1998-05-01), Nakatsuka et al.
patent: 5893027 (1999-04-01), Brueske
patent: 6278871 (2001-08-01), Jovenin et al.
patent: 6404648 (2002-06-01), Slupe et al.
patent: 7-283414 (1995-10-01), None

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