Radio frequency integrated circuit, and method for...

Details Radio frequency integrated circuit, and method for... Radio frequency integrated circuit, and method for...

2006-06-06

2006-06-06

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

C438S238000, C438S622000, C336S090000

Reexamination Certificate

active

07056801

ABSTRACT:
The present invention discloses a radio frequency integrated circuit and a method for manufacturing the same. The radio frequency integrated circuit is manufactured by forming an inductor and a passivation layer on an insulator substrate of a first substrate, forming an element layer having a multi-layer wiring structure on a semiconductor substrate, an inductor coupling line formed on the top portion of the element layer, first and second via contact plugs formed on the inductor coupling line, and an input/output pad coupled to the second via contact plug on a second substrate, and bonding the first substrate onto the second substrate, so that the inductor of the first substrate can be coupled to the first via contact plug of the second substrate. As a result, the radio frequency integrated circuit includes the inductor having a high Q value, by forming the inductor sufficiently separately from the semiconductor substrate on which the elements have been formed.

REFERENCES:
patent: 6504227 (2003-01-01), Matsuo et al.
patent: 2004/0063243 (2004-04-01), Usami

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