Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2007-12-27
2010-11-30
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257S367000, C257S122000, C257SE29040
Reexamination Certificate
active
07843032
ABSTRACT:
Apparatus, systems, and methods may include managing electrostatic discharge events in radio frequency identification (RFID) devices by using a semiconductor circuit having a non-aligned gate to implement a snap-back voltage protection mechanism. Such circuits may be formed by doping a semiconductor substrate to form a first conductive region as a well, forming one of a source region and a drain region in the well, depositing a layer of polysilicon on the substrate to establish a gating area that does not overlap the one of the source region and the drain region, and forming an integrated circuit including an RFID circuit that is supported by the substrate to couple to the one of the source region and the drain region to provide snap-back voltage operation at a node between the integrated circuit and the source or drain region. Additional apparatus, systems, and methods are disclosed.
REFERENCES:
patent: 6288884 (2001-09-01), Yu
patent: 6777721 (2004-08-01), Huang et al.
patent: 7141831 (2006-11-01), Vashchenko et al.
patent: 7718480 (2010-05-01), Vashchenko et al.
Khieu Cong
Ma Yanjun
Mavoori Jaideep
Nixon & Peabody LLP
Potter Roy K
Ritchie David B.
Synopsis, Inc.
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