Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Patent
1996-04-03
1998-04-07
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
330286, 330277, H03F 360, H03F 316
Patent
active
057369011
ABSTRACT:
In a radio frequency amplifier, a resistor and an inductor are connected to a gate terminal of transistor such as an FET. Another resistor for preventing oscillation is connected to the inductor. A capacitor and a third resistor connected to each other in parallel are connected to the first resistor while the other ends thereof are grounded. A resistance value of the resistor for preventing oscillation is in the range of about 30 .OMEGA. to about 70 .OMEGA.. An inductance value of the inductor is such that an impedance value for a low frequency becomes negligibly small.
REFERENCES:
patent: 4107621 (1978-08-01), Furutani et al.
patent: 5229732 (1993-07-01), Furutani et al.
patent: 5276406 (1994-01-01), Sanay et al.
patent: 5406224 (1995-04-01), Mikahi et al.
Maedaa et al, Institute of Electronics, Information and Communication Engineers of Japan, '93/11 vol. 176-C-I, No. 11, pp. 399-406, "Optimim Design of Low-Voltage and High Efficiency Gas Power Module", (no month).
Maeda Masahiro
Nakamura Morio
Ota Yorito
Matsushita Electric - Industrial Co., Ltd.
Mottola Steven
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