Amplifiers – With semiconductor amplifying device – Including differential amplifier
Patent
1992-02-14
1993-01-05
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including differential amplifier
330117, 330148, 330301, 331 8, 331 25, H03F 345, H03L 700
Patent
active
051774496
ABSTRACT:
A radio frequency amplifier comprises a differential amplifier having a pair of differential first and second transistors and a first and a second load resistor; an emitter grounded amplifier having a third transistor and a third load resistor; and a reference voltage generator having a constant-current source formed by a fourth transistor and a fourth load resistor. The emitter grounded amplifier receives a high frequency input signal and outputs a single signal output. One input node of the differential amplifier receives the output from the emitter grounded amplifier and the other input node receives a reference voltage from the reference voltage generator. The third and fourth transistors form a current-mirror circuit. The DC bias voltages of the two input nodes of the differential amplifier are set to have the same value by an appropriate selection of the ratio between the currents flowing in the third and fourth transistors and also the ratio between the resistance values of the third and fourth load resistors. This arrangement enables to divide a high frequency input signal into a single signal output and differential signal outputs.
REFERENCES:
patent: 4292597 (1981-09-01), Niimura et al.
I. Kipnis et al., "Silicon Bipolar Fixed and Variable . . . Applications up to 6 GHz", 1989 IEEE MTT-S Digest, pp. 109-112.
Hans-Martin Rein, "Multi-Gigabit-Per-Second Silicon Bipolar . . . Transmission Systems", IEEE Journal of Solid-State Circuits, vol. 23, No. 3, Jun. 1988, pp. 664-675.
Mullins James B.
NEC Corporation
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