Radical generating method, etching method and apparatus for...

Details Radical generating method, etching method and apparatus for... Radical generating method, etching method and apparatus for...

2011-01-25

2011-01-25

McDonald, Rodney G (Department: 1795)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S067000, C216S068000, C204S192320, C204S192350, C204S192360, C204S192370

Reexamination Certificate

active

07875199

ABSTRACT:
The method for generating radicals comprises:feeding F2gas or a mixed gas of F2gas and an inert gas into a chamber of which the inside is provided with a carbon material,supplying a carbon atom from the carbon material by applying a target bias voltage to the carbon material, and therebygenerating high density radicals,wherein the ratio of CF3radical, CF2radical and CF radical is arbitrarily regulated by controlling the target bias voltage applied to the carbon material while measuring the infrared absorption spectrum of radicals generated inside the chamber.

REFERENCES:
patent: 4464223 (1984-08-01), Gorin
patent: 4579618 (1986-04-01), Celestino et al.
patent: 5272417 (1993-12-01), Ohmi
patent: 6136214 (2000-10-01), Mori et al.
patent: 6197151 (2001-03-01), Kaji et al.
patent: 6423242 (2002-07-01), Kojima et al.
patent: 6511608 (2003-01-01), Mori et al.
patent: 6590179 (2003-07-01), Tanaka et al.
patent: 0 777 267 (1997-06-01), None
patent: 10-242130 (1998-09-01), None
patent: 11-145118 (1999-05-01), None
patent: 2000-173993 (2000-06-01), None
Koji Miyata, et al, “CFx(X=1-3) Radical Measurements in ECR Etching Plasma Employing C4F8Gas by Infrared Diode Laser Absorption Spectroscopy”, Japanese Journal of Applied Physics, Part 2 (Letters) Japan, vol. 34, No. 4A, Apr. 1, 1995, pp. L444-L447, XP002314120, ISSN: 0021-4922, abstract.
Teruo Shibano, Nobuo Fujiwara, Makoto Hirayama, Hitoshi Nagata, and Kiyoshi Demizu; Etching yields of SiO2by low energy CFx+and F+ions; Appl. Phys. Lett. 63 (17), Oct. 25, 1993, pp. 2336-2338.

Affiliated with

Also associated with

Rating

Radical generating method, etching method and apparatus for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radical generating method, etching method and apparatus for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radical generating method, etching method and apparatus for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2653779