Radiation-tolerant imaging device

Details Radiation-tolerant imaging device Radiation-tolerant imaging device

1994-08-18

1996-11-19

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257220, 257224, 257239, 257249, H01L 27148, H01L 29768

Patent

active

055765610

ABSTRACT:
A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO.sub.2 insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron's generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO.sub.2 layer.

REFERENCES:
patent: 3787823 (1974-01-01), Negishi
patent: 4517733 (1985-05-01), Hamano
patent: 4751193 (1988-06-01), Myrick
patent: 5017989 (1991-05-01), Street et al.
patent: 5438211 (1995-08-01), Nakamura et al.

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